PHOTON-INDUCED RECOVERY OF PHOTOQUENCHED EL2 INTRACENTER ABSORPTION IN GAAS

被引：50

作者：

FISCHER, DW

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 24期

关键词：

D O I：

10.1063/1.97736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1751 / 1753

页数：3

共 24 条

[1]

Gatos H. C., 1985, MATER RES SOC S P, V46, P153

[2] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

KUSZKO, W .

PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2204-2207

[3] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

LAGOWSKI, J ;

PARSEY, JM ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :302-304

[4] IDENTIFICATION OF OXYGEN-RELATED MIDGAP LEVEL IN GAAS [J].

LAGOWSKI, J ;

LIN, DG ;

AOYAMA, T ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :336-338

[5] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].

LAGOWSKI, J ;

GATOS, HC ;

PARSEY, JM ;

WADA, K ;

KAMINSKA, M ;

WALUKIEWICZ, W .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :342-344

[6]

LAYRAL P, 1982, SOLID STATE COMMUN, V42, P67

[7] THE ELECTRICAL AND PHOTOELECTRONIC PROPERTIES OF SEMI-INSULATING GAAS [J].

LOOK, DC .

SEMICONDUCTORS AND SEMIMETALS, 1983, 19 :75-170

[8]

MAKRAMEBEID S, 1985, SEMIINSULATING 3 5 M, P184

[9] FOURIER-TRANSFORM INFRARED-ABSORPTION STUDIES OF INTRACENTER TRANSITIONS IN THE EL2 LEVEL IN SEMIINSULATING BULK GAAS GROWN WITH THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE [J].

MANASREH, MO ;

COVINGTON, BC .

PHYSICAL REVIEW B, 1987, 35 (05) :2524-2527

[10] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

← 1 2 3 →