Multiple quantum well GaAs/AlGaAs solar cells:: transport and recombination properties by means of EBIC and cathodoluminescence

被引:8
作者
Araújo, D [1 ]
Romero, MJ
Morier-Genoud, F
García, R
机构
[1] Univ Cadiz, Fac Ciencias, Dept Ciencia Mat & IM & QI, E-11510 Puerto Real, Spain
[2] Ecole Polytech Fed Lausanne, Dept Phys, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 66卷 / 1-3期
关键词
multiple quantum well (MQW) p-i-n heterostructures; electron beam induced current (EBIC); cathodoluminescence;
D O I
10.1016/S0921-5107(99)00095-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Multiple quantum well (MQW) p-i-n heterostructures are a new alternative to increase the quantum efficiency of solar cell devices. In such structures, the QW carrier capture, carrier escape and radiative recombinations are the phenomena governing the efficiency of the p-i(MQW)-n solar cell. In this contribution, in spite of the photon-induced current mode of work of such device, an electron beam-induced-current (EBIC) study allowing a very localized carrier excitation is reported. The EBIC measurements are shown to be able to estimate with high accuracy the QWs capture-escape and radiative lifetimes. The Patter are determined as a function of the carrier injection level fitting experimental EBIC profiles to simulated ones. Values around 10(-10) and 10(-7) s respectively are obtained. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:151 / 156
页数:6
相关论文
共 7 条
[1]   Quantum-well AlGaAs heterostructures grown by low-temperature liquid-phase epitaxy [J].
Andreev, VM ;
Kazantsev, AB ;
Khvostikov, VP ;
Paleeva, EV ;
Rumyantsev, VD ;
Sorokina, SV .
MATERIALS CHEMISTRY AND PHYSICS, 1996, 45 (02) :130-135
[2]   DETERMINATION OF THE LATERAL DISTRIBUTION OF ELECTRON-HOLE PAIRS GENERATED BY AN ELECTRON-BEAM IN AL0.4GA0.6AS BY CATHODOLUMINESCENCE [J].
ARAUJO, D ;
BONARD, JM ;
OELGART, G ;
GANIERE, JD ;
MORIERGENOUD, F ;
REINHART, FK .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 24 (1-3) :124-129
[3]  
BARNHAM K, 1993, MRS B
[4]   Cathodoluminescence study of the spatial distribution of electron-hole pairs generated by an electron beam in Al0.4Ga0.6As [J].
Bonard, JM ;
Ganiere, JD ;
Akamatsu, B ;
Araujo, D ;
Reinhart, FK .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) :8693-8703
[5]   27.6-PERCENT EFFICIENCY (1 SUN, AIR-MASS 1.5) MONOLITHIC AL0.37GA0.63AS/GAAS 2-JUNCTION CASCADE SOLAR-CELL WITH PRISMATIC COVER GLASS [J].
CHUNG, BC ;
VIRSHUP, GF ;
HIKIDO, S ;
KAMINAR, NR .
APPLIED PHYSICS LETTERS, 1989, 55 (17) :1741-1743
[6]   Experimental analysis of the efficiency of heterostructure GaAs-AlGaAs solar cells [J].
Ragay, FW ;
Marti, A ;
Araujo, GL ;
Wolter, JH .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1996, 40 (01) :5-21
[7]   EBIC mode characterization of transport properties on laser heterostructures [J].
Romero, MJ ;
Araujo, D ;
Lambkin, JD ;
Garcia, R .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3) :57-60