EBIC mode characterization of transport properties on laser heterostructures

被引：4

作者：

Romero, MJ ^{[1
]}

Araujo, D ^{[1
]}

Lambkin, JD ^{[1
]}

Garcia, R ^{[1
]}

机构：

[1] NATL UNIV IRELAND UNIV COLL CORK,NATL MICROELECT RES CTR,CORK,IRELAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 44卷 / 1-3期

关键词：

double bulk heterostructure lasers; electron-beam-induced current; transport properties;

D O I：

10.1016/S0921-5107(96)01738-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A method for the quantitative evaluation of electron-beam-induced current (EBIC) profiles across p-n junctions (normal-collector configuration) is presented. The procedure consists of firstly estimating the extent of electron-hole (e-h) pair generation by Monte Carlo calculations. Secondly, the steady-state diffusion equation is applied to minority carriers in each differential volume to evaluate the minority carrier collection probability. The model is then used to investigate (lambda = 1.3 mu m) InGaAsP/InP double bulk heterostructure lasers. From the comparison of experimental and calculated linescans, the minority carrier diffusion length and surface recombination velocity are evaluated to be L = 0.52 mu m and SID = 1 x 10(5) cm(-1) at n-side and L = 0.87 mu m and SID = 5 x 10(4) cm(-1) at p-side. (C) 1997 Elsevier Science S.A.

引用

页码：57 / 60

页数：4

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