CARRIER TRANSPORT PROPERTY IN THE AMORPHOUS-SILICON AMORPHOUS-SILICON CARBIDE MULTILAYER STUDIED BY THE TRANSIENT GRATING TECHNIQUE

被引：21

作者：

HATTORI, K

MORI, T

OKAMOTO, H

HAMAKAWA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 16期

关键词：

D O I：

10.1063/1.98698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1259 / 1261

页数：3

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