Quenched growth of nanostructured lead thin films on insulating substrates

被引:6
作者
Bochenkov, V
Karageorgiev, P
Brehmer, L
Sergeev, GB
机构
[1] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119992, Russia
[2] Univ Potsdam, Inst Phys, D-14469 Potsdam, Germany
基金
俄罗斯基础研究基金会;
关键词
lead; quenched growth; ballistic aggregation; conductivity;
D O I
10.1016/j.tsf.2003.11.188
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Lead island films were obtained via vacuum vapor deposition on glass and ceramic substrates at 80 K. Electrical conductance was measured during vapor condensation and further annealing of the film up to room temperature. The resistance behavior during film formation and atomic force microscopy of annealed films were used as information sources about their structure. A model for the quenched growth, based on ballistic aggregation theory, was proposed. The nanostructure, responsible for chemiresistive properties of thin lead films and the mechanism of sensor response are discussed. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:304 / 308
页数:5
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