Epitaxial-strain-stabilized ordering in Au1-xNix alloy thin films grown by MBE

被引:17
作者
Abadias, G
Schuster, I
Marty, A
Gilles, B
机构
[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 09, France
[2] Inst Natl Polytech Grenoble, ENSEEG, LTPCM, F-38402 St Martin Dheres, France
关键词
D O I
10.1103/PhysRevB.61.6495
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of the epitaxial strain on the structural evolution with temperature of AuNi metastable alloys thin films is investigated. Samples with different initial configurations (codeposited Au1-xNix solid solutions and artificially layered structures) were grown by molecular-beam epitaxy on different (001)-oriented buffer layers (Au, Pt, and Pd). The epitaxial strain was varied by changing (i) the Ni content of the AuNi layer for a given kind of buffer layer, (ii) the nature of the buffer layer for a fixed Ni content, and (iii) the AuNi layer thickness for a fixed Ni content and buffer layer. The structural evolution upon annealing in the 180-300 degrees C temperature range was studied by in situ temperature x-ray diffraction as well as high-resolution electron microscopy. It is shown that a modulated structure develops along the growth direction of the AuNi layer, when the temperature reaches 200-240 degrees C, provided that the residual strain is high enough (>2%). This structure consists of a periodic stacking of 1 Ni-rich plane and 2 or 3 Au-rich planes, depending on the Ni content. The results are explained in terms of a strain-stabilized ordering effect, as supported by energetic calculations based on semiempirical interatomic potentials within the tight-binding scheme.
引用
收藏
页码:6495 / 6506
页数:12
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