Low resistance ohmic contact to n-GaN with a separate layer method

被引：45

作者：

Wu, YF ^{[1
]}

Jiang, WN ^{[1
]}

Keller, BP ^{[1
]}

Keller, S ^{[1
]}

Kapolnek, D ^{[1
]}

Denbaars, SP ^{[1
]}

Mishra, UK ^{[1
]}

Wilson, B ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 02期

关键词：

D O I：

10.1016/S0038-1101(96)00151-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed an ohmic metalization method to n-GaN through which low contact resistances down to 3 x 10(-6) Omega cm(2) have been achieved. The process consists of: depositing a 200 Angstrom thin layer Ti; annealing at 975 degrees C for 30 s, realigning and depositing another 200 A thin layer of Ti, followed by a 2000 Angstrom overlayer of Au. The high temperature annealing effect on bulk GaN has been investigated. No degradation of semiconductor bulk properties was found up to 1050 degrees C. TiN formation is believed to be the key to the low contact resistance. (C) 1997 Published by Elsevier Science Ltd.

引用

页码：165 / 168

页数：4

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