In situ electron microscopy studies of electromigration in stacked Al(Cu)/TiN interconnects

被引：19

作者：

Lau, JT ^{[1
]}

Prybyla, JA ^{[1
]}

Theiss, SK ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 02期

关键词：

D O I：

10.1063/1.125690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ transmission electron microscopy experiments on electromigration in Al(0.5%Cu)/TiN interconnects show that the TiN barrier layer improves reliability not only by acting as a shunting layer, but also by dramatically influencing electromigration behavior within the Al(Cu) interlayer. One highlight of these experiments is a complete absence of void migration in such lines, as opposed to Al(Cu) lines on SiO2 without barrier layer [Al(Cu)/SiO2]. This remarkable immobility of voids in Al(Cu)/TiN lines has a profound impact on failure mechanisms, lifetimes, and reliability of interconnects. The TiN barrier layer also dramatically effects void nucleation and growth. (C) 2000 American Institute of Physics. [S0003-6951(00)04502-2].

引用

页码：164 / 166

页数：3

共 19 条

[1] ANALYTICAL ELECTRON-MICROSCOPY OF AL/TIN CONTACTS ON SILICON FOR APPLICATIONS TO VERY LARGE-SCALE INTEGRATED DEVICES [J].