ANALYTICAL ELECTRON-MICROSCOPY OF AL/TIN CONTACTS ON SILICON FOR APPLICATIONS TO VERY LARGE-SCALE INTEGRATED DEVICES

被引：31

作者：

ARMIGLIATO, A ^{[1
]}

VALDRE, G ^{[1
]}

机构：

[1] UNIV BOLOGNA,DEPARTIMENTO FIS,I-40126 BOLOGNA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.338837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：390 / 396

页数：7

共 24 条

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[2] ELECTRON-MICROSCOPY OBSERVATIONS OF N2+-IMPLANTED TIN FILMS AS DIFFUSION-BARRIERS FOR VERY-LARGE-SCALE INTEGRATION APPLICATIONS [J].

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[4] ION-IMPLANTED TIN FILMS AS DIFFUSION-BARRIERS IN SILICON DEVICE TECHNOLOGY [J].

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[5]

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[7]

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