ION-IMPLANTED, ELECTRON-BEAM ANNEALED TIN FILMS AS DIFFUSION-BARRIERS FOR AL ON SI SHALLOW JUNCTIONS

被引：28

作者：

ARMIGLIATO, A

FINETTI, M

GARRIDO, J

GUERRI, S

OSTOJA, P

SCORZONI, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 06期

关键词：

D O I：

10.1116/1.572899

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：2237 / 2241

页数：5

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