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TITANIUM NITRIDE AS A DIFFUSION BARRIER BETWEEN NICKEL SILICIDE AND ALUMINUM
被引:16
作者
:
FINETTI, M
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CALTECH,PASADENA,CA 91125
FINETTI, M
[
1
]
SUNI, I
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CALTECH,PASADENA,CA 91125
SUNI, I
[
1
]
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CALTECH,PASADENA,CA 91125
NICOLET, MA
[
1
]
机构
:
[1]
CALTECH,PASADENA,CA 91125
来源
:
JOURNAL OF ELECTRONIC MATERIALS
|
1984年
/ 13卷
/ 02期
关键词
:
D O I
:
10.1007/BF02656683
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:327 / 340
页数:14
相关论文
共 18 条
[1]
ALUMINUM CONTACT TO NICKEL SILICIDE USING A THIN TUNGSTEN BARRIER
BARTUR, M
论文数:
0
引用数:
0
h-index:
0
BARTUR, M
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
[J].
THIN SOLID FILMS,
1982,
91
(02)
: 89
-
98
[2]
ELECTRICAL CHARACTERISTICS OF AL CONTACT TO NISI USING THIN W LAYER AS A BARRIER
BARTUR, M
论文数:
0
引用数:
0
h-index:
0
BARTUR, M
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(10)
: 822
-
824
[3]
BARTUR M, UNPUB J ELECTROCHEMI
[4]
CHEUNG NW, 1980, THIN FILM INTERFACES, P323
[5]
CONTACT RESISTIVITY OF TIN ON P+-SI AND N+-SI
FINETTI, M
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CALTECH,PASADENA,CA 91125
FINETTI, M
SUNI, I
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CALTECH,PASADENA,CA 91125
SUNI, I
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CALTECH,PASADENA,CA 91125
NICOLET, MA
[J].
SOLAR CELLS,
1983,
9
(03):
: 179
-
183
[6]
FOURNIER PR, 1975, Patent No. 3879746
[7]
STUDY OF AL-PD2SI CONTACTS ON SI
GRINOLDS, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
GRINOLDS, H
ROBINSON, GY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
ROBINSON, GY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1977,
14
(01):
: 75
-
78
[8]
ALUMINUM-NICKEL SILICIDE CONTACTS ON SILICON
HOKELEK, E
论文数:
0
引用数:
0
h-index:
0
HOKELEK, E
ROBINSON, GY
论文数:
0
引用数:
0
h-index:
0
ROBINSON, GY
[J].
THIN SOLID FILMS,
1978,
53
(02)
: 135
-
140
[9]
ELECTRICAL AND MECHANICAL FEATURES OF PLATINUM SILICIDE-ALUMINUM REACTION
HOSACK, HH
论文数:
0
引用数:
0
h-index:
0
机构:
GE CO, SYRACUSE, NY 13201 USA
GE CO, SYRACUSE, NY 13201 USA
HOSACK, HH
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(08)
: 3476
-
3485
[10]
PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS
MOHAMMADI, F
论文数:
0
引用数:
0
h-index:
0
MOHAMMADI, F
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
SARASWAT, KC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(02)
: 450
-
454
←
1
2
→
共 18 条
[1]
ALUMINUM CONTACT TO NICKEL SILICIDE USING A THIN TUNGSTEN BARRIER
BARTUR, M
论文数:
0
引用数:
0
h-index:
0
BARTUR, M
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
[J].
THIN SOLID FILMS,
1982,
91
(02)
: 89
-
98
[2]
ELECTRICAL CHARACTERISTICS OF AL CONTACT TO NISI USING THIN W LAYER AS A BARRIER
BARTUR, M
论文数:
0
引用数:
0
h-index:
0
BARTUR, M
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(10)
: 822
-
824
[3]
BARTUR M, UNPUB J ELECTROCHEMI
[4]
CHEUNG NW, 1980, THIN FILM INTERFACES, P323
[5]
CONTACT RESISTIVITY OF TIN ON P+-SI AND N+-SI
FINETTI, M
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CALTECH,PASADENA,CA 91125
FINETTI, M
SUNI, I
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CALTECH,PASADENA,CA 91125
SUNI, I
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CALTECH,PASADENA,CA 91125
NICOLET, MA
[J].
SOLAR CELLS,
1983,
9
(03):
: 179
-
183
[6]
FOURNIER PR, 1975, Patent No. 3879746
[7]
STUDY OF AL-PD2SI CONTACTS ON SI
GRINOLDS, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
GRINOLDS, H
ROBINSON, GY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
ROBINSON, GY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1977,
14
(01):
: 75
-
78
[8]
ALUMINUM-NICKEL SILICIDE CONTACTS ON SILICON
HOKELEK, E
论文数:
0
引用数:
0
h-index:
0
HOKELEK, E
ROBINSON, GY
论文数:
0
引用数:
0
h-index:
0
ROBINSON, GY
[J].
THIN SOLID FILMS,
1978,
53
(02)
: 135
-
140
[9]
ELECTRICAL AND MECHANICAL FEATURES OF PLATINUM SILICIDE-ALUMINUM REACTION
HOSACK, HH
论文数:
0
引用数:
0
h-index:
0
机构:
GE CO, SYRACUSE, NY 13201 USA
GE CO, SYRACUSE, NY 13201 USA
HOSACK, HH
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(08)
: 3476
-
3485
[10]
PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS
MOHAMMADI, F
论文数:
0
引用数:
0
h-index:
0
MOHAMMADI, F
SARASWAT, KC
论文数:
0
引用数:
0
h-index:
0
SARASWAT, KC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(02)
: 450
-
454
←
1
2
→