TIN FORMED BY EVAPORATION AS A DIFFUSION BARRIER BETWEEN AL AND SI

被引：177

作者：

TING, CY

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 01期

关键词：

D O I：

10.1116/1.571700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：14 / 18

页数：5

共 18 条

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CLASS, WH .

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[4]

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[6]

FOURNIER PR, 1975, Patent No. 3879746

[7] TIN AS A DIFFUSION BARRIER IN THE TI-PT-AU BEAM-LEAD METAL SYSTEM [J].

GARCEAU, WJ ;

FOURNIER, PR ;

HERB, GK .

THIN SOLID FILMS, 1979, 60 (02) :237-247

[8] STRUCTURE AND ELECTRICAL-PROPERTIES OF TITANIUM NITRIDE FILMS [J].

IGASAKI, Y ;

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MUTO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (01) :85-96

[9] SOLID-STATE REACTIONS IN TITANIUM THIN-FILMS ON SILICON [J].

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[10]

MAENPAA M, 1979, ECS M, V79, P946

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