ELECTRON-MICROSCOPY OBSERVATIONS OF N2+-IMPLANTED TIN FILMS AS DIFFUSION-BARRIERS FOR VERY-LARGE-SCALE INTEGRATION APPLICATIONS

被引：5

作者：

ARMIGLIATO, A ^{[1
]}

FINETTI, M ^{[1
]}

GUERRI, S ^{[1
]}

OSTOJA, P ^{[1
]}

SCORZONI, A ^{[1
]}

GARRIDO, J ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS APLICADA,MADRID 34,SPAIN

来源：

THIN SOLID FILMS | 1986年 / 140卷 / 01期

关键词：

D O I：

10.1016/0040-6090(86)90172-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：173 / 176

页数：4

共 10 条

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[3]

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[8] THERMAL-STABILITY OF HAFNIUM AND TITANIUM NITRIDE DIFFUSION-BARRIERS IN MULTILAYER CONTACTS TO SILICON [J].

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[9] TIN FORMED BY EVAPORATION AS A DIFFUSION BARRIER BETWEEN AL AND SI [J].

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[10] INTERFACIAL REACTIONS BETWEEN ALUMINUM AND TRANSITION-METAL NITRIDE AND CARBIDE FILMS [J].

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