PHASE-EQUILIBRIA IN THIN-FILM METALLIZATIONS

被引:146
作者
BEYERS, R [1 ]
SINCLAIR, R [1 ]
THOMAS, ME [1 ]
机构
[1] FAIRCHILD CAMERA & INSTRUMENT CORP,PALO ALTO,CA 94304
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 04期
关键词
D O I
10.1116/1.582879
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:781 / 784
页数:4
相关论文
共 15 条
[1]   INTERFACE EFFECTS IN THE FORMATION OF SILICON-OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATES [J].
BAGLIN, JEE ;
DHEURLE, FM ;
PETERSSON, CS .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1849-1854
[2]  
Barin I., 1973, THERMOCHEMICAL PROPE
[3]   THERMODYNAMIC CONSIDERATIONS IN REFRACTORY METAL-SILICON-OXYGEN SYSTEMS [J].
BEYERS, R .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) :147-152
[4]  
BORISOV YS, 1978, POROSHK METALL KIEV, V3, P63
[5]   REACTIONS OF REFRACTORY SILICIDES WITH CARBON AND NITROGEN [J].
BREWER, L ;
KRIKORIAN, O .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (01) :38-51
[6]   REFRACTORY METAL SILICON DEVICE TECHNOLOGY [J].
BROWN, DM ;
ENGELER, WE ;
GARFINKEL, M ;
GRAY, PV .
SOLID-STATE ELECTRONICS, 1968, 11 (12) :1105-+
[7]   SILICIDE FORMATION AT LOW-TEMPERATURES BY METAL-SIO2 INTERACTION [J].
KRAUTLE, H ;
NICOLET, MA ;
MAYER, JW .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 20 (01) :K33-K36
[8]   BACKSCATTERING ANALYSIS OF THE SUCCESSIVE LAYER STRUCTURES OF TITANIUM SILICIDES [J].
MAA, JS ;
LIN, CJ ;
LIU, JH ;
LIU, YC .
THIN SOLID FILMS, 1979, 64 (03) :439-444
[9]   REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].
MURARKA, SP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792
[10]  
NORSTROM H, 1984, PHYS SCR, V28, P633