INTERFACE EFFECTS IN THE FORMATION OF SILICON-OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATES

被引：58

作者：

BAGLIN, JEE

DHEURLE, FM

PETERSSON, CS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 04期

关键词：

D O I：

10.1063/1.332821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1849 / 1854

页数：6

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[1] ALTERNATIVE MARKER EXPERIMENT IN FORMATION OF MO AND W SILICIDES
BAGLIN, J
DHEURLE, F
PETERSSON, S
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 289 - 290
[2] FORMATION OF SILICIDES IN MO-W BILAYER FILMS ON SI SUBSTRATES - MARKER EXPERIMENT
BAGLIN, J
DEMPSEY, J
HAMMER, W
DHEURLE, F
PETERSSON, S
SERRANO, C
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 641 - 661
[3] RADIOACTIVE N NI-STAR TRACER STUDY OF THE NICKEL SILICIDE GROWTH-MECHANISM
BAGLIN, JEE
ATWATER, HA
GUPTA, D
DHEURLE, FM
[J]. THIN SOLID FILMS, 1982, 93 (3-4) : 255 - 264
[4] INTERFACE-MARKER TECHNIQUE APPLIED TO THE STUDY OF METAL SILICIDE GROWTH
BAGLIN, JEE
DHEURLE, FM
HAMMER, WN
PETERSSON, S
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 491 - 497
[5] THERMAL-OXIDATION OF NICKEL DISILICIDE
BARTUR, M
NICOLET, MA
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 175 - 177
[6] OXIDATION MECHANISMS IN TISI2 FILMS ON SINGLE SILICON SUBSTRATES
CHEN, JR
HOUNG, MP
HSIUNG, SK
LIU, YC
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 824 - 826
[7] INVESTIGATION ON TISI2 THIN-FILM OXIDATION BY RADIOACTIVE-TRACER TECHNIQUE
CHEN, JR
LIU, YC
CHU, SD
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 263 - 265
[8] CROS A, COMMUNICATION
[9] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE
CROWDER, BL
ZIRINSKY, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371
[10] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

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