THERMAL-OXIDATION OF NICKEL DISILICIDE

[1] OXIDATION MECHANISMS IN TISI2 FILMS ON SINGLE SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 824 - 826

[2] CHEN JR, 1981, JUN TECHN PROGR EL M

[3] INTERFACIAL ORDER IN EPITAXIAL NISI2 [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 544 - 547

[4] Chu WK., 1978, BACKSCATTERING SPECT

[5] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[6] GROVE AS, 1967, PHYS TECHNOL S, P102

[7] GROVE AS, 1967, PHYS TECHNOL S, P23

[8] OXIDATION OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (09) : 826 - 827

[9] SILICON OXIDATION STUDIES - OXIDATION OF HEAVILY B-DOPED AND P-DOPED SINGLE-CRYSTAL SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) : 1146 - 1151

[10] MAENPAA M, COMMUNICATION

[1] OXIDATION MECHANISMS IN TISI2 FILMS ON SINGLE SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 824 - 826

[2] CHEN JR, 1981, JUN TECHN PROGR EL M

[3] INTERFACIAL ORDER IN EPITAXIAL NISI2 [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 544 - 547

[4] Chu WK., 1978, BACKSCATTERING SPECT

[5] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[6] GROVE AS, 1967, PHYS TECHNOL S, P102

[7] GROVE AS, 1967, PHYS TECHNOL S, P23

[8] OXIDATION OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (09) : 826 - 827

[9] SILICON OXIDATION STUDIES - OXIDATION OF HEAVILY B-DOPED AND P-DOPED SINGLE-CRYSTAL SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) : 1146 - 1151

[10] MAENPAA M, COMMUNICATION