THERMODYNAMIC CONSIDERATIONS IN REFRACTORY METAL-SILICON-OXYGEN SYSTEMS

[1] INTERFACE EFFECTS IN THE FORMATION OF SILICON-OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1849 - 1854

[2] Barin I., 1973, THERMOCHEMICAL PROPE

[3] Barin I., 2013, THERMOCHEMICAL PROPE

[4] BEYERS R, UNPUB

[5] BEYERS R, 1983, MAT RES SOC S P, V14, P423

[6] REFRACTORY METAL SILICON DEVICE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1105 - +

[7] CHEMICAL BONDING AND REACTIONS AT TI/SI AND TI/OXYGEN/SI INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 771 - 775

[8] TANTALUM SILICIDE INTERCONNECT CHARACTERIZATION BY SURFACE ANALYTICAL TECHNIQUES [J]. APPLIED SURFACE SCIENCE, 1981, 9 (1-4) : 377 - 387

[9] OXIDATION MECHANISMS IN TISI2 FILMS ON SINGLE SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 824 - 826

[10] OXIDATION OF SILICIDE THIN-FILMS - TISI2 [J]. APPLIED PHYSICS LETTERS, 1983, 42 (04) : 361 - 363

[1] INTERFACE EFFECTS IN THE FORMATION OF SILICON-OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1849 - 1854

[2] Barin I., 1973, THERMOCHEMICAL PROPE

[3] Barin I., 2013, THERMOCHEMICAL PROPE

[4] BEYERS R, UNPUB

[5] BEYERS R, 1983, MAT RES SOC S P, V14, P423

[6] REFRACTORY METAL SILICON DEVICE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1105 - +

[7] CHEMICAL BONDING AND REACTIONS AT TI/SI AND TI/OXYGEN/SI INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 771 - 775

[8] TANTALUM SILICIDE INTERCONNECT CHARACTERIZATION BY SURFACE ANALYTICAL TECHNIQUES [J]. APPLIED SURFACE SCIENCE, 1981, 9 (1-4) : 377 - 387

[9] OXIDATION MECHANISMS IN TISI2 FILMS ON SINGLE SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 824 - 826

[10] OXIDATION OF SILICIDE THIN-FILMS - TISI2 [J]. APPLIED PHYSICS LETTERS, 1983, 42 (04) : 361 - 363