Red-light-emitting diodes fabricated by near-ultraviolet InGaN chips with molybdate phosphors

被引：90

作者：

Wang, Zhengliang ^{[1
]}

Liang, Hongbin ^{[1
]}

Wang, Jing ^{[1
]}

Gong, Menglian ^{[1
]}

Su, Qiang ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Chem & Chem Engn, Minist Educ Key Lab Bioinorgan & Synth Chem, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 07期

基金：

中国国家自然科学基金;

关键词：

SINGLE-CRYSTALS; LUMINESCENCE; SPECTRA;

D O I：

10.1063/1.2335579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Phosphors Na5La(MoO4)(4):xEu(3+) and NaEu(MoO4)(2) were prepared with a solid-state reaction technique. Their photoluminescent properties were investigated at room temperature. Bright red-light-emitting diodes were fabricated by coating the phosphors onto near-ultraviolet/violet-emitting InGaN chips, respectively. The diodes prepared with phosphor Na5Eu(MoO4)(4) show appropriate CIE chromaticity coordinates (x=0.65,y=0.34) and exhibit more intensive red emission than that prepared with NaEu(MoO4)(2), indicating that Na5Eu(MoO4)(4) may be applied as an excellent red component for near-ultraviolet InGaN-based white diodes.(c) 2006 American Institute of Physics.

引用

页数：3

共 16 条

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