Narrow-band, tunable, semiconductor-laser-based source for deep-UV absorption spectroscopy

被引：15

作者：

Kliner, DAV ^{[1
]}

Koplow, JP ^{[1
]}

Goldberg, L ^{[1
]}

机构：

[1] USN,RES LAB,DIV OPT SCI,WASHINGTON,DC 20375

来源：

OPTICS LETTERS | 1997年 / 22卷 / 18期

关键词：

D O I：

10.1364/OL.22.001418

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Tunable, narrow-bandwidth (<200-MHz), similar to 215-nm radiation was produced by frequency quadrupling the similar to 860-nm output of a high-power, pulsed GaAlAs tapered amplifier seeded by an external-cavity diode laser. Pulsing the amplifier increased the 860 nm --> 215 nm conversion efficiency by 2 orders of magnitude with respect to cw operation. Detection of nitric oxide and sulfur dioxide by high-resolution absorption spectroscopy was demonstrated. (C) 1997 Optical Society of America.

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页码：1418 / 1420

页数：3

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