Bistetracene Thin Film Polymorphic Control to Unravel the Effect of Molecular Packing on Charge Transport

被引:15
作者
Burnett, Edmund K. [1 ]
Ly, Jack [1 ]
Niazi, Muhammad R. [2 ]
Zhang, Lei [1 ]
McCuskey, Samantha R. [1 ]
Amassian, Aram [2 ]
Smilgies, Detlef-M. [3 ]
Mannsfeld, Stefan C. B. [4 ]
Briseno, Alejandro L. [1 ]
机构
[1] Univ Massachusetts Amherst, Dept Polymer Sci & Engn, Amherst, MA 01003 USA
[2] King Abdullah Univ Sci & Technol KAUST, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia
[3] Cornell Univ, Cornell High Energy Synchrotron Source, Ithaca, NY 14853 USA
[4] Tech Univ Dresden, Ctr Adv Elect Dresden, D-01062 Dresden, Germany
来源
ADVANCED MATERIALS INTERFACES | 2018年 / 5卷 / 09期
基金
美国国家科学基金会;
关键词
bistetracene; organic semiconductors; polymorphism; solvent vapor annealing; FIELD-EFFECT TRANSISTORS; PI-CONJUGATED OLIGOMERS; ORGANIC SEMICONDUCTOR; HIGH-MOBILITY; TEMPERATURE-DEPENDENCE; SINGLE-CRYSTALS; ANISOTROPY; PERFORMANCE; PENTACENE; MODULATION;
D O I
10.1002/admi.201701607
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Polymorphism, the ability for a given material to adopt multiple crystalline packing states, is a powerful approach for investigating how changes in molecular packing influence charge transport within organic semiconductors. In this study, a new "thin film" polymorph of the high-performance, p-type small molecule N-octyldiisopropylsilyl acetylene bistetracene (BT) is isolated and characterized. Structural changes in the BT films are monitored using static and in situ grazing-incidence X-ray diffraction. The diffraction data, combined with simulation and crystallographic refinement calculations, show the molecular packing of the "thin film" polymorph transforms from a slipped 1D pi-stacking motif to a highly oriented and crystalline film upon solvent vapor annealing with a 2D brick-layer pi-stacking arrangement, similar to the so-called "bulk" structure observed in single crystals. Charge transport is characterized as a function of vapor annealing, grain orientation, and temperature. Demonstrating that mobility increases by three orders of magnitude upon solvent vapor annealing and displays a differing temperature-dependent mobility behavior.
引用
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页数:8
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