Structure, morphology, and optical properties of thin films of F16CuPc grown on silicon dioxide

被引：36

作者：

Ossó, JO

Schreiber, F

Alonso, MI

Garriga, M

Barrena, E

Dosch, H

机构：

[1] Univ Oxford, Phys & Theoret Chem Lab, Oxford OX1 3QZ, England

[2] Esfera UAB, Inst Ciencia Mat Barcelona, CSIC, Bellaterra 08193, Spain

[3] Max Planck Inst Met Res, D-70569 Stuttgart, Germany

[4] Univ Stuttgart, Inst Theoret & Angew Phys, D-70550 Stuttgart, Germany

来源：

ORGANIC ELECTRONICS | 2004年 / 5卷 / 1-3期

关键词：

organic thin films; crystalline structure; optical properties; x-ray diffraction; AFM; spectroscopic ellipsometry;

D O I：

10.1016/j.orgel.2004.01.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of hexadecafluorophthalocyanine (F16CuPc) were grown by organic molecular beam deposition (OMBD) under ultra high vacuum (UHV) conditions on oxidized Si(001) substrates. The film thicknesses ranged from 120 to 450 Angstrom and the substrate temperature was varied from -150 to 300degreesC. X-ray diffraction and atomic force microscopy (AFM) were used to characterize the structure and morphology of the layers. Spectroscopic ellipsometry was employed to determine the dielectric properties and to locate characteristic transitions between 1.4 and 3.7 eV. The correlation of the electronic properties with the molecular packing in the films is discussed. The results are compared to the case of F16CuPc films grown on stepped sapphire surfaces, which differ in their lateral ordering behavior. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：135 / 140

页数：6

共 17 条

[1] Strong optical anisotropies of F16CuPc thin films studied by spectroscopic ellipsometry [J].