Study of Zn diffusion into GaSb from the vapour and liquid phase

被引：50

作者：

Bett, AW ^{[1
]}

Keser, S ^{[1
]}

Sulima, OV ^{[1
]}

机构：

[1] FRAUNHOFER INST SOLAR ENERGY SYST,D-79100 FREIBURG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 181卷 / 1-2期

关键词：

diffusion; GaSb; Zn; photovoltaic cells;

D O I：

10.1016/S0022-0248(97)00186-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In order to develop a simple and reproducible method to fabricate p-n structures on GaSb for optoelectronic devices, the Zn-diffusion into n-doped GaSb substrates was studied. Two methods of Zn-diffusion were experimentally investigated: (a) diffusion from the vapour phase in a pseudo-closed box system and (b) diffusion from the liquid phase from a Ga-Sb-Zn melt. The process parameters, which provide good control over Zn surface concentration and p-n junction depth, were determined.

引用

页码：9 / 16

页数：8

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