ETCHBACK REGROWTH PROCESS FOR ALGAAS/GAAS SOLAR-CELL STRUCTURES

被引：7

作者：

BALDUS, A ^{[1
]}

BETT, A ^{[1
]}

BLIESKE, U ^{[1
]}

SULIMA, OV ^{[1
]}

WETTLING, W ^{[1
]}

机构：

[1] FRAUNHOFER INST SOLAR ENERGY SYST,D-79100 FREIBURG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 146卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00503-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The liquid phase epitaxy etchback regrowth (LPE-ER) process has been studied for the growth of AlGaAs/GaAs solar cell structures. The influence of substrate position (vertical or horizontal), melt depth, degree of saturation with As of the Ga-based melt and temperature on the grown structures was investigated. In spite of quite different growth conditions and resulting surface morphology one can reproducibly obtain high-efficiency solar cells (> 22%, AM 1.5).

引用

页码：299 / 304

页数：6

共 8 条

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[J]. APPLIED PHYSICS LETTERS, 1979, 34 (06) : 366 - 368
[8] ISOTHERMAL ETCHBACK-REGROWTH METHOD FOR HIGH-EFFICIENCY GA1-XALXAS-GAAS SOLAR-CELLS
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HOVEL, HJ
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (09) : 492 - 493

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