Low-temperature properties of La1-xCaxMnO3 single crystals:: comparison with La1-xSrxMnO3

被引：131

作者：

Okuda, T ^{[1
]}

Tomioka, Y

Asamitsu, A

Tokura, Y

机构：

[1] JRCAT, Tsukuba, Ibaraki 3050046, Japan

[2] Univ Tokyo, Cryogen Ctr, Tokyo 1130032, Japan

[3] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.61.8009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated, in single crystals of La1-xCaxMnO3, the insulator-metal (IM) transition at the ground state induced by carrier doping or applying pressure around the critical doping level (x(c)approximate to 0.22). The up turn of the resistivity in the IM critical region has been found under a pressure below the Curie temperature (Tc) perhaps due to the proximity to the orbital-ordered ferromagnetic insulating phase. Around the IM transition the additional T-3 and T-1.5 components are clearly observed in the specific heat, while the T-2 coefficient of the resistivity and the residual resistivity is much enhanced in the metallic region in the vicinity of the transition. These results reveal the subsistence of the charge/orbital correlation in the metallic ground state.

引用

页码：8009 / 8015

页数：7

共 39 条

[31] FILLING DEPENDENCE OF ELECTRONIC-PROPERTIES ON THE VERGE OF METAL MOTT-INSULATOR TRANSITIONS IN SR1-XLAXTIO3 [J].