Desorption of O2 from SiO2 films during irradiation of SiO2 with MeV/a.m.u. heavy ions

被引：8

作者：

Arnoldbik, WM ^{[1
]}

Tomozeiu, N ^{[1
]}

Habraken, FHPM ^{[1
]}

机构：

[1] Univ Utrecht, Debye Inst, NL-3508 TA Utrecht, Netherlands

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 219卷

关键词：

oxygen diffusion; electronic sputtering; silicon dioxide thin films; elastic recoil detection analysis; radiation damage;

D O I：

10.1016/j.nimb.2004.01.075

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Desorption of O-2 accompanies the electronic sputtering during irradiation of SiO2 films with similar to1 MeV/a.m.u. heavy ions, but contributes only a few% to the total loss of oxygen. After a small desorption from the entire film at the onset of irradiation, the O-2 molecules appear to originate from the top 5-10 nm of the film. We propose as mechanism that the 0, molecules are produced along the entire ion track but only are able to escape from the material when they are created in the top few nm. For larger depths they get trapped in the oxide network before they reach the surface, except at the onset of irradiation where the concentration of trapping centers might be insignificant. This irradiation induced mobility of oxygen causes (SiO2)-O-16/(SiO2)-O-18 interfaces to be broadened during irradiation, as we have experimentally verified from desorption sputtering depth profiles and glancing angle RBS measurements. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：312 / 316

页数：5

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