Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

We present an efficient, fully quantum mechanical approach to calculating ballistic transport in fully-depleted silicon-on-insulator metal-oxide semiconductor field effect transistor devices in three dimensions and apply the technique to the calculation of threshold voltages for realistic devices with narrow channels. We illustrate the fact that each dopant configuration becomes exceedingly important for quantum simulations. (C) 2004 American Institute of Physics.