Self-linearizing technique for L-band HBT power amplifier: Effect of source impedance on phase distortion

被引：9

作者：

Yamada, H ^{[1
]}

Ohara, S ^{[1
]}

Iwai, T ^{[1
]}

Yamaguchi, Y ^{[1
]}

Imanishi, K ^{[1
]}

Joshin, K ^{[1
]}

机构：

[1] FUJITSU LABS LTD,CMPD SEMICOND LSI LAB,AKASHI,HYOGO 24301,JAPAN

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1996年 / 44卷 / 12期

关键词：

D O I：

10.1109/22.554568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

L-band power amplifiers operating with high efficiency and high linearity at a single and low supply voltage are in strong demand for mobile communication systems, This paper presents a new self-linearizing technique for power heterojunction bipolar transistors (HBT's). Utilizing the nonlinear input conductance of the device itself and setting the source impedance to the self-linearizing impedance, the phase distortion and the adjacent channel leakage power (ACP) for pi/4-shift QPSK modulated signal of our InGaP/GaAs power HBT's have been greatly improved, As a result, the HBT exhibited the ACP at 50 kHz offset frequency of -49.2 dBc with a power-added efficiency (PAE) of 56% at an output power (P-out) of 31 dBm under a supply voltage of 3.5 V.

引用

页码：2398 / 2402

页数：5