QUASI-LINEAR AMPLIFICATION USING SELF-PHASE DISTORTION COMPENSATION TECHNIQUE

被引:35
作者
HAYASHI, H
NAKATSUGAWA, M
MURAGUCHI, R
机构
[1] NTT Wireless Systems Laboratories, Yokosuka-shi, Kanagawa 238-03
关键词
D O I
10.1109/22.473178
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper demonstrates a self phase distortion compensation technique to realize linear power amplifiers, in which the positive phase deviation from a common-source PET and the negative phase deviation from a common-gate FET cancel each other, It is confirmed both theoretically and experimentally that increasing the drain-to source conductance, G(d), causes the self phase distortion compensation effect, An experimental power amplifier for L-band personal communications systems, which employs the cascode connection, shows good phase deviation performance, More than 20-dB gain, 21-dBm output power, and 50% power added efficiency are obtained along with the adjacent channel interference of -52 dBc in 192-kHz bands at 600-kHz offset frquency from 1.9 GHz at the operating voltage of only 3 V. The demonstrated performances satisfy the specifications for the 1.9-GHz Japanese Personal Handy-phone System (PHS) utilizing the pi/4-shift QPSK modulation scheme, The proposed technique is suitable for MMIC design, and allows the design of handsets that are small, lightweight, and have long operating times.
引用
收藏
页码:2557 / 2564
页数:8
相关论文
共 11 条
[1]  
CHIBA K, 1990, IEEE GLOBCOM, V3, P1958
[2]  
DRURY DM, 1985, IEEE MICROWAVE THEOR, V1, P219
[3]  
IKEDA H, 1992, IEEE MICROWAVE THEOR, V2, P541
[4]  
KOHIYAMA K, 1994, IEEE MICROWAVE THEOR, V3, P1781
[5]   PERFORMANCE OF DUAL-GATE GAAS MESFETS AS GAIN-CONTROLLED LOW-NOISE AMPLIFIERS AND HIGH-SPEED MODULATORS [J].
LIECHTI, CA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1975, MT23 (06) :461-469
[6]   COMPUTER CALCULATION OF LARGE-SIGNAL GAAS-FET AMPLIFIER CHARACTERISTICS [J].
MATERKA, A ;
KACPRZAK, T .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1985, 33 (02) :129-135
[7]  
MURAGUCHI M, 1993, IEEE MICROWAVE THEOR, V2, P793
[8]  
NAGAOKAET M, 1994, IEEE MICROWAVE THEOR, V2, P577
[9]   DESIGN OF BROAD-BAND POWER GAAS-FET AMPLIFIERS [J].
TAJIMA, Y ;
MILLER, PD .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (03) :261-267
[10]   GAAS-FET LARGE-SIGNAL MODEL AND ITS APPLICATION TO CIRCUIT DESIGNS [J].
TAJIMA, Y ;
WRONA, B ;
MISHIMA, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :171-175