DESIGN OF BROAD-BAND POWER GAAS-FET AMPLIFIERS

被引:29
作者
TAJIMA, Y
MILLER, PD
机构
关键词
D O I
10.1109/TMTT.1984.1132663
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:261 / 267
页数:7
相关论文
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[2]   GAAS-FET LARGE-SIGNAL MODEL AND ITS APPLICATION TO CIRCUIT DESIGNS [J].
TAJIMA, Y ;
WRONA, B ;
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :171-175
[3]   TECHNIQUE FOR PREDICTING LARGE-SIGNAL PERFORMANCE OF A GAAS MESFET [J].
WILLING, HA ;
RAUSCHER, C ;
DESANTIS, P .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (12) :1017-1023