TECHNIQUE FOR PREDICTING LARGE-SIGNAL PERFORMANCE OF A GAAS MESFET

被引：78

作者：

WILLING, HA

RAUSCHER, C

DESANTIS, P

机构：

[1] Naval Research Laboratory

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1978年 / 26卷 / 12期

关键词：

D O I：

10.1109/TMTT.1978.1129538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method is described for accurately predicting the nonlinear microwave performance of GaAs MESFET devices. The method utilizes time-domain analysis and is based upon the experimentally characterized bias dependence of device-circuit model elements. Precise predictions are made of fundamental and harmonic power levels up to 6 dB of gain compression. U.S. Government work not protected by U.S. © 1978 IEEE

引用

页码：1017 / 1023

页数：7

共 4 条

[1] Engelmann R. W. H., 1976, International Electron Devices Meeting. (Technical digest), P351
[2] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE
LEHOVEC, K
ZULEEG, R
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (10) : 1415 - &
[3] MODELING 3RD-ORDER INTERMODULATION DISTORTION PROPERTIES OF A GAAS FET
TUCKER, RS
RAUSCHER, C
[J]. ELECTRONICS LETTERS, 1977, 13 (17) : 508 - 510
[4] MODELING OF GUNN-DOMAIN EFFECTS IN GAAS MESFETS
WILLING, HA
SANTIS, PD
[J]. ELECTRONICS LETTERS, 1977, 13 (18) : 537 - 539

← 1 →