Experimental surface acoustic wave properties of AlN thin films on sapphire substrates

被引：14

作者：

Kaya, K ^{[1
]}

Takahashi, H ^{[1
]}

Shibata, Y ^{[1
]}

Kanno, Y ^{[1
]}

Hirai, T ^{[1
]}

机构：

[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 98077,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 1A期

关键词：

AlN; chemical vapor deposition; surface acoustic wave properties; piezoelectricity; electro-mechanical coupling constant; static capacitance; acoustic impedance; normalized susceptance;

D O I：

10.1143/JJAP.36.307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Equivalent circuit model parameters of Rayleigh propagation along the [001] axis of AIN (110) thin films synthesized using chemical vapor deposition on a sapphire R-plane were measured. The electro-mechanical coupling constant was 0.63% at kh greater than or equal to 2, and the static capacitance was 46.3pF/m in the case that the line/space ratio was unity. The acoustic impedance and the normalized susceptance were obtained as a function of wavelength of surface acoustic wave for various line/space ratios.

引用

页码：307 / 312

页数：6

共 18 条

[1] CAPACITANCE AND FIELD DISTRIBUTIONS FOR INTERDIGITAL SURFACE-WAVE TRANSDUCERS [J].