Effect of variations in grain size and grain boundary barrier heights on the current-voltage characteristics of ZnO varistors

被引:54
作者
Nan, CW
Clarke, DR
机构
[1] Materials Department, College of Engineering, Univ. of California at Santa Barbara, Santa Barbara
[2] Res. Inst. for Advanced Materials, Wuhan University of Technology, Wuhan
[3] Intl. Centre for Materials Physics, Academica Sinica
关键词
D O I
10.1111/j.1151-2916.1996.tb08094.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Throughout the microstructure at every varistor, there exist variations of the grain size and the electrical properties of the individual grain boundaries, To calculate the effect of such microstructural variations on the overall electrical transport properties, we describe a multibond percolation approach utilizing effective medium theory. The model presented takes into account these variations as well as the electrical conductivity of the ZnO grains themselves, To illustrate the predictions of the model, both the effect of continuous distributions in the grain boundary potential and the grain size are considered, as well as a bi-lognormal distribution in grain size to represent the effect of a population of anomalously large grains in a smaller grain size varistor.
引用
收藏
页码:3185 / 3192
页数:8
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