Hall-Petch relationship in pulsed-laser deposited nickel films

被引:78
作者
Knapp, JA [1 ]
Follstaedt, DM [1 ]
机构
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
关键词
D O I
10.1557/jmr.2004.19.1.218
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin-film mechanical properties can be measured using nanoindentation combined with detailed finite element modeling. This technique was used for a study of very fine grained Ni films, formed using pulsed-laser deposition on fused silica, sapphire, and Ni substrates. The grain sizes in the films were characterized by electron microscopy, and the mechanical properties were determined by ultra-low load indentation, analyzed using finite element modeling to separate the mechanical properties of the thin layers from those of the substrates. Some Ni films were deposited at high temperature or annealed after deposition to enlarge the grain sizes. The observed hardnesses and grain sizes in these thin Ni films are consistent with the empirical Hall-Petch relationship for grain sizes ranging from a few micrometers to as small as 10 rim, suggesting that deformation occurs preferentially by dislocation movement even in such nanometer-size grains.
引用
收藏
页码:218 / 227
页数:10
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