Interaction of oxygen with a Cs-monolayer-covered Si(100) surface

被引：16

作者：

Lu, QB ^{[2
]}

Souda, R

OConnor, DJ

King, BV

机构：

[1] NATL INST RES INORGAN MAT,TSUKUBA,IBARAKI 305,JAPAN

[2] UNIV NEWCASTLE,DEPT PHYS,CALLAGHAN,NSW 2308,AUSTRALIA

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.54.R17347

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Oxygen adsorption on a Cs-monolayer-covered Si(100) surface has been studied by Li- ion spectroscopy and normally emitted secondary electron emission (SEE) spectroscopy. It is clearly shown that the oxygen lies above and below the Cs atoms, respectively, at low and high O exposures, disproving the dipole model for the work function change. The initial O adsorption induces a shoulder at the low-energy edge of the SEE spectra, indicating the existence of patches of a lower work function on the surface. The patches are explained as due to the CsO* complexes formed by nonadiabatic chemisorption.

引用

页码：17347 / 17350

页数：4

共 31 条

[1]

BONZEL P, 1989, PHYSICS CHEM ALKALI

[2]

BOTTCHER A, 1991, J CHEM PHYS, V95, P3756, DOI 10.1063/1.460826

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