Atomistic Simulations of Heat Transport in Silicon Nanowires

被引:244
作者
Donadio, Davide [1 ]
Galli, Giulia [1 ]
机构
[1] Univ Calif Davis, Dept Chem, Davis, CA 95616 USA
关键词
MOLECULAR-DYNAMICS SIMULATION; THERMAL-CONDUCTIVITY; AMORPHOUS-SILICON; SI;
D O I
10.1103/PhysRevLett.102.195901
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a series of molecular dynamics, lattice dynamics, and Boltzmann transport equation calculations aimed at understanding heat transport in Silicon nanowires. In agreement with recent experiments, we find that the computed thermal conductivity strongly depends on the surface structure. It may be as high as that of bulk Si for crystalline wires, while wires with amorphous surfaces have the smallest thermal conductivity, about 100 times lower than the bulk. Two, combined effects are responsible for this dramatic difference: the presence, at disordered surfaces, of extended, nonpropagating modes analogous to heat carriers in amorphous Si, together with decreased lifetimes of propagating modes.
引用
收藏
页数:4
相关论文
共 31 条
[1]   THERMAL-CONDUCTIVITY OF DISORDERED HARMONIC SOLIDS [J].
ALLEN, PB ;
FELDMAN, JL .
PHYSICAL REVIEW B, 1993, 48 (17) :12581-12588
[2]   Silicon nanowires as efficient thermoelectric materials [J].
Boukai, Akram I. ;
Bunimovich, Yuri ;
Tahir-Kheli, Jamil ;
Yu, Jen-Kan ;
Goddard, William A., III ;
Heath, James R. .
NATURE, 2008, 451 (7175) :168-171
[3]   Thermal conductance of thin silicon nanowires [J].
Chen, Renkun ;
Hochbaum, Allon I. ;
Murphy, Padraig ;
Moore, Joel ;
Yang, Peidong ;
Majumdar, Arun .
PHYSICAL REVIEW LETTERS, 2008, 101 (10)
[4]   Diameter-controlled synthesis of single-crystal silicon nanowires [J].
Cui, Y ;
Lauhon, LJ ;
Gudiksen, MS ;
Wang, JF ;
Lieber, CM .
APPLIED PHYSICS LETTERS, 2001, 78 (15) :2214-2216
[5]   Thermal conductivity of isolated and interacting carbon nanotubes: Comparing results from molecular dynamics and the Boltzmann transport equation [J].
Donadio, Davide ;
Galli, Giulia .
PHYSICAL REVIEW LETTERS, 2007, 99 (25)
[6]   Numerical study of low-frequency vibrations in amorphous silicon [J].
Feldman, JL ;
Allen, PB ;
Bickham, SR .
PHYSICAL REVIEW B, 1999, 59 (05) :3551-3559
[7]   THERMAL-CONDUCTIVITY AND LOCALIZATION IN GLASSES - NUMERICAL STUDY OF A MODEL OF AMORPHOUS-SILICON [J].
FELDMAN, JL ;
KLUGE, MD ;
ALLEN, PB ;
WOOTEN, F .
PHYSICAL REVIEW B, 1993, 48 (17) :12589-12602
[8]  
Frenkel D., 2002, UNDERSTANDING MOL SI, V2nd edn
[9]   EFFECT OF QUANTUM-WELL STRUCTURES ON THE THERMOELECTRIC FIGURE OF MERIT [J].
HICKS, LD ;
DRESSELHAUS, MS .
PHYSICAL REVIEW B, 1993, 47 (19) :12727-12731
[10]   Controlled growth of Si nanowire arrays for device integration [J].
Hochbaum, AI ;
Fan, R ;
He, RR ;
Yang, PD .
NANO LETTERS, 2005, 5 (03) :457-460