Vacancy-hydrogen complexes in group-IV semiconductors

被引：22

作者：

Budde, M

Nielsen, BB

Keay, JC

Feldman, LC

机构：

[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[2] Univ Aarhus, Inst Phys & Astron, Aarhus, Denmark

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷

关键词：

H; Ge; vacancy; local vibrational modes;

D O I：

10.1016/S0921-4526(99)00448-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm(-1) in Ge:H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H-SiC: H, indicating that H behaves differently in this material. (C) 1999 Elsevier Science B.V. All rights reserved.

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页码：208 / 211

页数：4

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