Identification of the silicon vacancy containing a single hydrogen atom by EPR

被引：63

作者：

Nielsen, BB ^{[1
]}

Johannesen, P ^{[1
]}

Stallinga, P ^{[1
]}

Nielsen, KB ^{[1
]}

Byberg, JR ^{[1
]}

机构：

[1] AARHUS UNIV, INST CHEM, DK-8000 AARHUS C, DENMARK

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.79.1507

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electron paramagnetic resonance spectrum of float-zone silicon recorded after implantation with protons contains a strongly temperature dependent signal from a vacancy-type defect. The signal displays monoclinic-I symmetry below 65 K and trigonal symmetry above 100 K. This symmetry change, together with a hyperfine splitting from a single proton, allows an unequivocal identification with VH0, the neutral charge state of a vacancy containing a single hydrogen atom. The striking similarity between the properties of VH0 and VP0 (the E center) corroborate our identification.

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页码：1507 / 1510

页数：4

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