STRUCTURE OF ACCEPTOR-HYDROGEN AND DONOR-HYDROGEN COMPLEXES IN SILICON FROM UNIAXIAL-STRESS STUDIES

被引：77

作者：

BERGMAN, K ^{[1
]}

STAVOLA, M ^{[1
]}

PEARTON, SJ ^{[1
]}

HAYES, T ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.38.9643

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9643 / 9648

页数：6

共 32 条

[1] HYDROGEN-ACCEPTOR PAIRS IN SILICON - REPLY
ASSALI, LVC
LEITE, JR
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (04) : 403 - 403
[2] MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON
ASSALI, LVC
LEITE, JR
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (09) : 980 - 982
[3] DONOR-HYDROGEN COMPLEXES IN PASSIVATED SILICON
BERGMAN, K
STAVOLA, M
PEARTON, SJ
LOPATA, J
[J]. PHYSICAL REVIEW B, 1988, 37 (05): : 2770 - 2773
[4] Bergman K., 1988, Defects in Electronic Materials. Symposium, P281
[5] BERGMAN K, 1988, 15TH P INT C DEF SEM
[6] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED
BOSOMWORTH, DR
HAYES, W
SPRAY, ARL
WATKINS, GD
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) : 133 - +
[7] VIBRATIONAL-SPECTRA OF HYDROGEN IN SILICON AND GERMANIUM
CARDONA, M
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (02): : 463 - 481
[8] THEORY OF HYDROGEN PASSIVATION OF SHALLOW-LEVEL DOPANTS IN CRYSTALLINE SILICON
CHANG, KJ
CHADI, DJ
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (14) : 1422 - 1425
[9] Corbett J. W., 1988, Defects in Electronic Materials. Symposium, P229
[10] VIBRATIONAL-MODE THEORY OF ACCEPTOR-HYDROGEN COMPLEXES IN SILICON
DASILVA, ECF
ASSALI, LVC
LEITE, JR
DALPINO, A
[J]. PHYSICAL REVIEW B, 1988, 37 (06): : 3113 - 3116