VIBRATIONAL-MODE THEORY OF ACCEPTOR-HYDROGEN COMPLEXES IN SILICON

被引：15

作者：

DASILVA, ECF ^{[1
]}

ASSALI, LVC ^{[1
]}

LEITE, JR ^{[1
]}

DALPINO, A ^{[1
]}

机构：

[1] INST TECNOL AERONAUT,DEPT FIS,CTR TECN AEROESPACIAL,BR-12200 SAO JOSE CAMPOS,SP,BRAZIL

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.37.3113

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3113 / 3116

页数：4

共 16 条

[1] HYDROGEN-ACCEPTOR PAIRS IN SILICON - REPLY
ASSALI, LVC
LEITE, JR
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (04) : 403 - 403
[2] MICROSCOPIC MECHANISM OF HYDROGEN PASSIVATION OF ACCEPTOR SHALLOW LEVELS IN SILICON
ASSALI, LVC
LEITE, JR
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (09) : 980 - 982
[3] Capizzi M., 1987, 18th International Conference on the Physics of Semiconductors, P995
[4] HYDROGEN-ACCEPTOR PAIRS IN SILICON - PAIRING EFFECT ON THE HYDROGEN VIBRATIONAL FREQUENCY
DELEO, GG
FOWLER, WB
[J]. PHYSICAL REVIEW B, 1985, 31 (10): : 6861 - 6864
[5] VIBRATIONAL-MODES OF OXYGEN IN GAP INCLUDING NEAREST-NEIGHBOR INTERACTIONS
FEENSTRA, RM
HAUENSTEIN, RJ
MCGILL, TC
[J]. PHYSICAL REVIEW B, 1983, 28 (10): : 5793 - 5801
[6] MECHANISM FOR HYDROGEN COMPENSATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON
JOHNSON, NM
[J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5525 - 5528
[7] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN
PANKOVE, JI
CARLSON, DE
BERKEYHEISER, JE
WANCE, RO
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (24) : 2224 - 2225
[8] HYDROGEN LOCALIZATION NEAR BORON IN SILICON
PANKOVE, JI
ZANZUCCHI, PJ
MAGEE, CW
LUCOVSKY, G
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 421 - 423
[9] NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN
PANKOVE, JI
WANCE, RO
BERKEYHEISER, JE
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1100 - 1102
[10] EFFECT OF HYDROGEN ON SHALLOW DOPANTS IN CRYSTALLINE SILICON
PANTELIDES, ST
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 995 - 997

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