Transient enhanced diffusion of implanted boron in 4H-silicon carbide

被引：53

作者：

Janson, MS

Linnarsson, MK

Hallén, A

Svensson, BG

Nordell, N

Bleichner, H

机构：

[1] Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden

[2] IMC, S-16440 Kista, Sweden

[3] ABB Corp Res, S-16440 Kista, Sweden

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 11期

关键词：

D O I：

10.1063/1.126055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental evidence is given for transient enhanced diffusion of boron (B) in ion-implanted silicon carbide (SiC). The implanted B is diffusing several mu m into the samples when annealed at 1600 and 1700 degrees C for 10 min, but the in-diffused tails remain unaffected when the annealing times are increased to 30 min at the same temperatures. A lower limit of the effective B diffusivity at 1600 degrees C is determined to 7x10(-12) cm(2)/s, which is 160 times larger than the equilibrium B diffusivity given in the literature. (C) 2000 American Institute of Physics. [S0003-6951(00)03111-9].

引用

页码：1434 / 1436

页数：3