Transport properties of [2,2]-paracyclophane thin films

被引:32
作者
Hu, WP [1 ]
Gompf, B [1 ]
Pflaum, J [1 ]
Schweitzer, D [1 ]
Dressel, M [1 ]
机构
[1] Univ Stuttgart, Inst Phys, D-70550 Stuttgart, Germany
关键词
D O I
10.1063/1.1758773
中图分类号
O59 [应用物理学];
学科分类号
摘要
The transport properties of [2,2]-paracyclophane thin films prepared by molecular beam epitaxy were studied by space-charge-limited current measurements. This organic semiconductor, which has a three-dimensional pi-system comparable to that of C-60, is an interesting material for molecular electronic applications due to its remarkably high mobility and its insensitivity against photo-oxidation. The current-voltage characteristics were recorded using a coplanar electrode geometry which has the advantage, that after deposition no further processing of the organic semiconducting layer is necessary. In polycrystalline films hole mobilities up to 10(-2) cm(2) V-1 s(-1) were observed at room temperature. (C) 2004 American Institute of Physics.
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页码:4720 / 4722
页数:3
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