High resolution electron microscopy of heavy-ion induced defects in superconducting Bi-2212 thin films in relation to their effect on J(c)

被引:36
作者
Wiesner, J
Traeholt, C
Wen, JG
Zandbergen, HW
Wirth, G
Fuess, H
机构
[1] DELFT UNIV TECHNOL,MAT SCI LAB,NCHREM,NL-2628 AL DELFT,NETHERLANDS
[2] TH DARMSTADT,FACHBEREICH MAT WISSENSCH,D-64287 DARMSTADT,GERMANY
[3] ISTEC,SUPERCONDUCT RES LAB,KOTO KU,TOKYO 135,JAPAN
[4] GESELL SCHWERIONENFORSCH MBH,D-64291 DARMSTADT,GERMANY
来源
PHYSICA C | 1996年 / 268卷 / 1-2期
关键词
D O I
10.1016/0921-4534(96)00381-4
中图分类号
O59 [应用物理学];
学科分类号
摘要
Bi2Sr2CaCu2O8+delta thin films were irradiated with 200 MeV Ca-40, 1162 MeV and 2640 MeV Au-197 and 1404 MeV U-238 ions. The radiation-induced defects in the films were investigated with high resolution electron microscopy (HREM) both in cross-section and in-plane view, The HREM study shows that swift heavy ions produce well defined latent columnar tracks consisting of totally amorphized material divided by a sharp transition from the surrounding crystalline material. In-situ measurements of the transport critical current density J(c) on a single sample irradiated first with Ca then with Au ions were performed, Correlations of the transport measurements with HREM data show clearly that continuous columnar defects (Au-197, U-238) are more efficient pinning centers than scattered defect cascades (Ca-40).
引用
收藏
页码:161 / 172
页数:12
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