Mobility studies of field-effect transistor structures based on anthracene single crystals

被引：151

作者：

Aleshin, AN ^{[1
]}

Lee, JY

Chu, SW

Kim, JS

Park, YW

机构：

[1] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea

[2] Seoul Natl Univ, Condensed Matter Res Inst, Seoul 151747, South Korea

[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 26期

关键词：

D O I：

10.1063/1.1767282

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The charge carrier transport in anthracene single crystals has been studied by means of field-effect transistor (FET) structure. The FET mobility (mu(FET)) revealed the nonmonotonous, reliant on gate-voltage (V-g), temperature dependence with the maximum mu(FET)similar to0.02 cm(2)/V s at Tsimilar to170-180 K and V(g)similar to-30 V. At temperatures below 180 K the mobility decreases and becomes thermally activated with the V-g-dependent activation energy E(a)similar to40-70 meV governed by shallow traps. The space-charge-limited current is the dominant transport mechanism in FET structures based on anthracene single crystals. (C) 2004 American Institute of Physics.

引用

页码：5383 / 5385

页数：3

共 22 条

[1] Field-effect transistor on pentacene single crystal [J].