1.3W 1.9GHz and 1W 2.4GHz power amplifier MMIC in silicon

被引：4

作者：

Simburger, W

Trost, HP

Wohlmuth, HD

Knapp, H

Weger, P

机构：

[1] Siemens AG, Corporate Research and Development, Microelectronics, Munich, D-81739 Munich

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 19期

关键词：

microwave power amplifiers; MMIC; silicon;

D O I：

10.1049/el:19961193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A completely integrated 1.3W power amplifier in silicon for 1.9 and 2.4GHz wireless and mobile communications is presented for the first time. The chip is implemented in a 25GHz f(T), 0.8 mu m, three layer interconnect silicon bipolar production technology (SIEMENS B6HF). The MMIC is designed for 3.4 to 5V battery operation at 1.9GHz, and delivers 0.4W (26dBm) to 1.3W (31.1 dBm) of output power with up to 33% power-added efficiency. The amplifier is also suitable for the 2.4GHz band with slight performance loss.

引用

页码：1827 / 1829

页数：3

共 5 条

[1]

Lipperer G., 1995, NTZ, V48, P8

[2] CLASS-E - NEW CLASS OF HIGH-EFFICIENCY TUNED SINGLE-ENDED SWITCHING POWER AMPLIFIERS [J].