Molecular hydrogen formation in hydrogenated silicon nitride

被引：54

作者：

Dekkers, H. F. W.

Beaucarne, G.

Hiller, M.

Charifi, H.

Slaoui, A.

机构：

[1] IMEC vzw, B-3001 Louvain, Belgium

[2] Tech Univ Dresden, D-01062 Dresden, Germany

[3] InESS CNRS, F-67037 Strasbourg, France

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 21期

关键词：

D O I：

10.1063/1.2396900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogen is released from hydrogenated silicon nitride (SiNx:H) during thermal treatments. The formation of molecular hydrogen (H-2) in SiNx:H layers with low mass density is confirmed by Raman spectroscopy. However, no H-2 is observed in layers with a high mass density despite clear evidence that hydrogen diffuses through those layers. Therefore hydrogen migrates in those layers in a different form. This is consistent with the observed improvement of the hydrogen passivation of silicon substrates using thermally treated high density SiNx:H antireflection coatings. (c) 2006 American Institute of Physics.

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