Highly efficient carrier multiplication in PbS nanosheets

被引：239

作者：

Aerts, Michiel ^{[1
]}

Bielewicz, Thomas ^{[2
]}

Klinke, Christian ^{[2
]}

Grozema, Ferdinand C. ^{[1
]}

Houtepen, Arjan J. ^{[1
]}

Schins, Juleon M. ^{[1
]}

Siebbeles, Laurens D. A. ^{[1
]}

机构：

[1] Delft Univ Technol, Dept Chem Engn, Optoelect Mat Sect, NL-2628 BL Delft, Netherlands

[2] Univ Hamburg, Inst Phys Chem, D-20146 Hamburg, Germany

来源：

NATURE COMMUNICATIONS | 2014年 / 5卷

基金：

欧洲研究理事会;

关键词：

MULTIPLE EXCITON GENERATION; SEMICONDUCTOR NANOCRYSTALS; MULTIEXCITON GENERATION; AUGER RECOMBINATION; QUANTUM DOTS; NANORODS; CHARGES; PBTE;

D O I：

10.1038/ncomms4789

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Semiconductor nanocrystals are promising for use in cheap and highly efficient solar cells. A high efficiency can be achieved by carrier multiplication (CM), which yields multiple electron-hole pairs for a single absorbed photon. Lead chalcogenide nanocrystals are of specific interest, since their band gap can be tuned to be optimal to exploit CM in solar cells. Interestingly, for a given photon energy CM is more efficient in bulk PbS and PbSe, which has been attributed to the higher density of states. Unfortunately, these bulk materials are not useful for solar cells due to their low band gap. Here we demonstrate that two-dimensional PbS nanosheets combine the band gap of a confined system with the high CM efficiency of bulk. Interestingly, in thin PbS nanosheets virtually the entire excess photon energy above the CM threshold is used for CM, in contrast to quantum dots, nanorods and bulk lead chalcogenide materials.

引用

页数：5

共 29 条

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