Enhanced Multiple Exciton Generation in Quasi-One-Dimensional Semiconductors

被引:128
作者
Cunningham, Paul D. [1 ]
Boercker, Janice E. [1 ]
Foos, Edward E. [1 ]
Lumb, Matthew P. [1 ,2 ]
Smith, Anthony R. [1 ]
Tischler, Joseph G. [1 ]
Melinger, Joseph S. [1 ]
机构
[1] USN, Res Lab, Washington, DC 20375 USA
[2] George Washington Univ, Sch Engn & Appl Sci, Washington, DC 20052 USA
关键词
Multiple exciton generation; carrier multiplication; nanorods; nanocrystals; photovoltaic; EFFICIENCY CARRIER MULTIPLICATION; QUANTUM DOTS; CONVERSION EFFICIENCY; COLLOIDAL PBSE; SOLAR-CELLS; ABSORPTION; LIMITS;
D O I
10.1021/nl202014a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The creation of a single electron-hole pair (i.e., exciton) per incident photon is a fundamental limitation for current optoelectronic devices including photodetectors and photovoltaic cells. The prospect of multiple exciton generation per incident photon is of great interest to fundamental science and the improvement of solar cell technology. Multiple exciton generation is known to occur in semiconductor nanostructures with increased efficiency and reduced threshold energy compared to their bulk counterparts. Here we report a significant enhancement of multiple exciton generation in PbSe quasi-one-dimensional semiconductors (nanorods) over zero-dimensional nanostructures (nanocrystals), characterized by a 2-fold increase in efficiency and reduction of the threshold energy to (2.23 +/- 0.03)E-g, which approaches the theoretical limit of 2E(g). Photovoltaic cells based on PbSe nanorods are capable of improved power conversion efficiencies, in particular when operated in conjunction with solar concentrators.
引用
收藏
页码:3476 / 3481
页数:6
相关论文
共 47 条
[1]   Multiexcitons confined within a subexcitonic volume: Spectroscopic and dynamical signatures of neutral and charged biexcitons in ultrasmall semiconductor nanocrystals [J].
Achermann, M ;
Hollingsworth, JA ;
Klimov, VI .
PHYSICAL REVIEW B, 2003, 68 (24)
[2]   Electronic states and optical properties of PbSe nanorods and nanowires [J].
Bartnik, A. C. ;
Efros, Al. L. ;
Koh, W. -K. ;
Murray, C. B. ;
Wise, F. W. .
PHYSICAL REVIEW B, 2010, 82 (19)
[3]   Comparing Multiple Exciton Generation in Quantum Dots To Impact Ionization in Bulk Semiconductors: Implications for Enhancement of Solar Energy Conversion [J].
Beard, Matthew C. ;
Midgett, Aaron G. ;
Hanna, Mark C. ;
Luther, Joseph M. ;
Hughes, Barbara K. ;
Nozik, Arthur J. .
NANO LETTERS, 2010, 10 (08) :3019-3027
[4]   On the absence of detectable carrier multiplication in a transient absorption study of InAs/CdSe/ZnSe core/shell1/shell2 quantum dots [J].
Ben-Lulu, Meirav ;
Mocatta, David ;
Bonn, Mischa ;
Banin, Uri ;
Ruhman, Sanford .
NANO LETTERS, 2008, 8 (04) :1207-1211
[5]   Size and Temperature Dependence of Band-Edge Excitons in PbSe Nanowires [J].
Boercker, Janice E. ;
Clifton, Emily M. ;
Tischler, Joseph G. ;
Foos, Edward E. ;
Zega, Thomas J. ;
Twigg, Mark E. ;
Stroud, Rhonda M. .
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2011, 2 (06) :527-531
[6]   Thermodynamic efficiency limits for semiconductor solar cells with carrier multiplication [J].
Brendel, R ;
Werner, JH ;
Queisser, HJ .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1996, 41-2 (41-42) :419-425
[7]   Size-Dependent Composition and Molar Extinction Coefficient of PbSe Semiconductor Nanocrystals [J].
Dai, Quanqin ;
Wang, Yingnan ;
Li, Xinbi ;
Zhang, Yu ;
Pellegrino, Donald J. ;
Zhao, Muxun ;
Zou, Bo ;
Seo, JaeTae ;
Wang, Yiding ;
Yu, William W. .
ACS NANO, 2009, 3 (06) :1518-1524
[8]   Carrier multiplication in bulk and nanocrystalline semiconductors: Mechanism, efficiency, and interest for solar cells [J].
Delerue, Christophe ;
Allan, Guy ;
Pijpers, J. J. H. ;
Bonn, M. .
PHYSICAL REVIEW B, 2010, 81 (12)
[9]  
EFROS AL, 1995, SOLID STATE COMMUN, V93, P281, DOI 10.1016/0038-1098(94)00780-2
[10]   Highly efficient multiple exciton generation in colloidal PbSe and PbS quantum dots [J].
Ellingson, RJ ;
Beard, MC ;
Johnson, JC ;
Yu, PR ;
Micic, OI ;
Nozik, AJ ;
Shabaev, A ;
Efros, AL .
NANO LETTERS, 2005, 5 (05) :865-871