Carrier multiplication in bulk and nanocrystalline semiconductors: Mechanism, efficiency, and interest for solar cells

被引：73

作者：

Delerue, Christophe ^{[1
]}

Allan, Guy ^{[1
]}

Pijpers, J. J. H. ^{[2
]}

Bonn, M. ^{[2
]}

机构：

[1] CNRS, Dept ISEN, Inst Elect Microelect & Nanotechnol, UMR 8520, F-59046 Lille, France

[2] FOM, Inst Atom & Mol Phys, NL-1098 XG Amsterdam, Netherlands

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 12期

关键词：

MULTIPLE EXCITON GENERATION; MULTIEXCITON GENERATION; COLLOIDAL PBSE; QUANTUM DOTS; RELAXATION;

D O I：

10.1103/PhysRevB.81.125306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carrier multiplication (CM), the possibility to generate more than one exciton in a semiconductor quantum dot (QD) after absorption of a single photon has been intensely debated in recent years. Following on previous theoretical and experimental work, we report here that: (1) although the CM factor (i.e., number of generated photons per absorbed photon) at a given photon energy is higher in bulk than in QDs of the same material [Pijpers , Nature Phys. 5, 811 (2009)], the energy efficiency (the relative fraction of the photon energy that is transformed into excitons rather than heat) is higher in QDs; (2) for the same similar to 1.2 eV band gap, CM is more efficient in PbSe QDs than in bulk silicon; (3) nonetheless, the efficiency of solar cells based on PbSe QDs is not significantly enhanced by CM compared to a bulk silicon-based device.

引用

页数：6

共 34 条

[1] Influence of electronic structure and multiexciton spectral density on multiple-exciton generation in semiconductor nanocrystals: Tight-binding calculations [J].

Allan, G. ;

Delerue, C. .

PHYSICAL REVIEW B, 2008, 77 (12)

[2] Role of impact ionization in multiple exciton generation in PbSe nanocrystals [J].

Allan, G. ;

Delerue, C. .

PHYSICAL REVIEW B, 2006, 73 (20)

[3] Confinement effects in PbSe quantum wells and nanocrystals [J].

Allan, G ;

Delerue, C .

PHYSICAL REVIEW B, 2004, 70 (24) :1-9

[4] Fast relaxation of hot carriers by impact ionization in semiconductor nanocrystals: Role of defects [J].

Allan, Guy ;

Delerue, Christophe .

PHYSICAL REVIEW B, 2009, 79 (19)

[5]

*ASTM, G1733 ASTM

[6] Multiple exciton generation in colloidal silicon nanocrystals [J].

Beard, Matthew C. ;

Knutsen, Kelly P. ;

Yu, Pingrong ;

Luther, Joseph M. ;

Song, Qing ;

Metzger, Wyatt K. ;

Ellingson, Randy J. ;

Nozik, Arthur J. .

NANO LETTERS, 2007, 7 (08) :2506-2512

[7] Variations in the Quantum Efficiency of Multiple Exciton Generation for a Series of Chemically Treated PbSe Nanocrystal Films [J].

Beard, Matthew C. ;

Midgett, Aaron G. ;

Law, Matt ;

Semonin, Octavi E. ;

Ellingson, Randy J. ;

Nozik, Arthur J. .

NANO LETTERS, 2009, 9 (02) :836-845

[8] On the absence of detectable carrier multiplication in a transient absorption study of InAs/CdSe/ZnSe core/shell1/shell2 quantum dots [J].

Ben-Lulu, Meirav ;

Mocatta, David ;

Bonn, Mischa ;

Banin, Uri ;

Ruhman, Sanford .

NANO LETTERS, 2008, 8 (04) :1207-1211

[9] INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS [J].

BENISTY, H ;

SOTOMAYORTORRES, CM ;

WEISBUCH, C .

PHYSICAL REVIEW B, 1991, 44 (19) :10945-10948

[10] PHONON-SCATTERING AND ENERGY RELAXATION IN 2-DIMENSIONAL, ONE-DIMENSIONAL, AND ZERO-DIMENSIONAL ELECTRON GASES [J].

BOCKELMANN, U ;

BASTARD, G .

PHYSICAL REVIEW B, 1990, 42 (14) :8947-8951

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