Physics of ferroelectric thin-film memory devices

被引：10

作者：

Scott, JF ^{[1
]}

Dawber, M ^{[1
]}

机构：

[1] Univ Cambridge, Dept Earth Sci, Symetrix Ctr Ferro, Cambridge CB2 3EQ, England

来源：

FERROELECTRICS | 2002年 / 265卷

关键词：

thin-films; nanoscale; memories; fatigue;

D O I：

10.1080/00150190208260611

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We review three subtopics: Fatigue, nano-phase ferroelectric capacitors, and oxygen vacancy clustering. In each case we try to emphasize problems which are still unsolved.

引用

页码：119 / 128

页数：10

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