Electrochemical doping of few-layer ZrNCl from first principles: Electronic and structural properties in field-effect configuration

被引:55
作者
Brumme, Thomas [1 ]
Calandra, Matteo
Mauri, Francesco
机构
[1] CNRS, UMR 7590, F-75005 Paris, France
关键词
EFFECT TRANSISTORS; MOS2; MOBILITY;
D O I
10.1103/PhysRevB.89.245406
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We develop a first-principles theoretical approach to doping in field-effect devices. The method allows for calculation of the electronic structure as well as complete structural relaxation in field-effect configuration using density-functional theory. We apply our approach to ionic-liquid-based field-effect doping of monolayer, bilayer, and trilayer ZrNCl and analyze in detail the structural changes induced by the electric field. We show that, contrary to what is assumed in previous experimental works, only one ZrNCl layer is electrochemically doped and that this induces large structural changes within the layer. Surprisingly, despite these structural and electronic changes, the density of states at the Fermi energy is independent of the doping. Our findings imply a substantial revision of the phase diagram of electrochemically doped ZrNCl and elucidate crucial differences with superconductivity in Li-intercalated bulk ZrNCl.
引用
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页数:11
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